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| STD/SDT100 Thyristor-Diode Modules, Diode-Thyristor Modules Type VRSM VDSM V STD/SDT100GK08 900 STD/SDT100GK12 1300 STD/SDT100GK14 1500 STD/SDT100GK16 1700 STD/SDT100GK18 1900 STD/SDT100GK20 2100 STD/SDT100GK22 2300 VRRM VDRM V 800 1200 1400 1600 1800 2000 2200 Dimensions in mm (1mm=0.0394") Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 ITSM, IFSM TVJ=TVJM VR=0 2 Test Conditions Maximum Ratings 180 100 Unit A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=250A 1700 1800 1540 1640 14450 13500 11850 11300 150 A i dt TVJ=45oC VR=0 TVJ=TVJM VR=0 A2s TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=0.45A diG/dt=0.45A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA A/us non repetitive, IT=ITAVM 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 t=1min t=1s 3000 3600 2.5-4.0/22-35 2.5-4.0/22-35 90 V/us W W V o TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=300us C V~ Nm/lb.in. g Mounting torque (M5) Terminal connection torque (M5) Typical including screws STD/SDT100 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values 15 1.74 0.85 3.2 VD=6V; VD=6V; TVJ=TVJM; TVJ=TVJM; o Unit mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2 IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM VD=2/3VDRM o IT, IF=300A; TVJ=25 C For power-loss calculations only (TVJ=TVJM) o 1.5 1.6 100 200 0.25 10 200 150 2 typ. 185 170 45 0.22 0.11 0.42 0.21 12.7 9.6 50 TVJ=25 C; tp=30us; VD=6V IG=0.45A; diG/dt=0.45A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM TVJ=TVJM; IT, IF=50A; -di/dt=6A/us o FEATURES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ APPLICATIONS * DC motor control * Softstart AC motor controller * Light, heat and temperature control ADVANTAGES * Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits STD/SDT100 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature 10 1: IGT, TVJ = 125o C V VG 2: IGT, TVJ = 25oC 3: IGT, TVJ = -40oC 3 1 1 4 2 5 6 4: PGAV = 0.5 W IGD, TVJ = 125o C 0.1 100 101 102 5: PGM = 5W 6: PGM = 10 W 103 IG mA 104 Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 4 Gate trigger characteristics 1000 TVJ = 25oC s tgd typ. 100 Limit 10 3 x STD/SDT100 1 10 100 IG mA 1000 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3 x STD/SDT100 Fig. 6 Gate trigger delay time STD/SDT100 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 3 x STD/SDT100 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.22 0.23 0.25 0.27 0.28 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.0066 0.0678 0.1456 ti (s) 0.0019 0.0477 0.344 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.42 0.43 0.45 0.47 0.48 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.0066 0.0678 0.1456 0.2 ti (s) 0.0019 0.0477 0.344 1.32 |
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